Second Layer Nucleation in Thin Film Growth

Publication Type
Journal Article
Year of Publication
1999
Authors
Rottler, Jörg
Maass, Philipp
Name of Publication
Physical Review Letters
Volume
83
Pagination
3490–3493
Abstract

We study the second layer nucleation on top of islands emerging during epitaxial growth of thin films. By employing kinetic Monte Carlo simulations we determine the critical island radius Rc upon which small stable nuclei form in the second layer. We find that the dependence of Rc on the additional step edge barrier {ΔEs} {(Schwoebel} barrier) is not in accordance with existing theories. Scaling arguments are presented which explain how Rc depends on {ΔEs} as well as on adatom diffusion rates and on the incoming atom flux. Based on the theory, the occurrence of smooth layer-by-layer growth as opposed to rough multilayer growth is discussed.