Abstract:Spin-based quantum bits in silicon are an exciting platform for processing of quantum information. Silicon materials host some of the most coherent quantum two-level systems ever measured [1], and qubits can be manipulated and measured accurately in devices that resemble classical transistors [2]. An often-overlooked aspect of quantum devices is the problem of reading out many qubits on a single chip, which is important not just to extract information about the quantum states on the chip, but in the future, to correct errors that occur when qubits are manipulated. In this seminar I will discuss the first projective measurement of coupled spins bound to dopant atoms in the channel of an industrially fabricated transistor. This was performed by inducing a spin-dependent motion of a hole spin from one impurity to another using the transistor’s gate electrode [3], and detecting the motion with the aid of a miniature cryogenic radio-frequency cavity [4]. Strategies for reaching and exceeding the Heisenberg limit of measurement accuracy using similar techniques will be discussed.
1. Saeedi et al, Science, 2013, 342, pg. 830
2. Muhonen et al, Nature Nanotech, 2014, 9, pg. 986, Veldhorst et al, Nature Nanotech, 2014, 9, pg. 981.
3. Van der Heijden et al, Nano Letters 2014, 14, pg. 1492, Van der Heijden et al, Science Advances, 2018, 4, eaat9199.
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2020-06-04T14:00:002020-06-04T15:00:00CM seminar : Cavity-mediated spin readout in an industrial silicon transistorEvent Information:
Abstract: Spin-based quantum bits in silicon are an exciting platform for processing of quantum information. Silicon materials host some of the most coherent quantum two-level systems ever measured [1], and qubits can be manipulated and measured accurately in devices that resemble classical transistors [2]. An often-overlooked aspect of quantum devices is the problem of reading out many qubits on a single chip, which is important not just to extract information about the quantum states on the chip, but in the future, to correct errors that occur when qubits are manipulated. In this seminar I will discuss the first projective measurement of coupled spins bound to dopant atoms in the channel of an industrially fabricated transistor. This was performed by inducing a spin-dependent motion of a hole spin from one impurity to another using the transistor’s gate electrode [3], and detecting the motion with the aid of a miniature cryogenic radio-frequency cavity [4]. Strategies for reaching and exceeding the Heisenberg limit of measurement accuracy using similar techniques will be discussed.
1. Saeedi et al, Science, 2013, 342, pg. 830
2. Muhonen et al, Nature Nanotech, 2014, 9, pg. 986, Veldhorst et al, Nature Nanotech, 2014, 9, pg. 981.
3. Van der Heijden et al, Nano Letters 2014, 14, pg. 1492, Van der Heijden et al, Science Advances, 2018, 4, eaat9199.
4. Petersson, Nano Letters, 2010, 10, pg. 2789.Event Location:
Zoom Meeting ID: 918 1320 7475