Chemical imaging of photoresists with coherent anti-Stokes Raman scattering (CARS) microscopy RID C-3312-2011

Publication Type
Journal Article
Year of Publication
2004
Authors
Potma, EO
Xie, XS
Muntean, L
Preusser, J
Jones, D
Ye,J.
Leone, SR
Hinsberg, WD
Schade, W
Name of Publication
Journal of Physical Chemistry B
Volume
108
Pagination
1296 - 1301
Issue
4
Date Published
2004/01/29/
ISBN Number
1520-6106
Keywords
0.13 mu-m, challenges, Diffusion, electron-beam lithography, field infrared microscopy, picosecond lasers
Abstract

Coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated to be a powerful imaging technique with chemical specificity for studying chemically amplified polymer photoresists. Samples of poly(tertbutyl oxycarbonyloxy styrene) (PTBOCST) resist imprinted by interferometric lithography with a pattern of lines/spaces of 400 nm/400 nm and 200 nm/200 nm were used to test CARS imaging capabilities. Chemical contrast in the image is obtained by probing the carbonyl stretching vibration of the tert-butoxyl carbonyl group of PTBOCST. The experimental images demonstrate high spatial resolution (approximate to270 nm) and strong signal, which allows short acquisition times. Advantages and limitations of CARS in comparison with other imaging techniques with chemical specificity, such as infrared near field scanning optical microscopy (IR NSOM), are discussed.


Source URL: https://phas.ubc.ca/chemical-imaging-photoresists-coherent-anti-stokes-raman-scattering-cars-microscopy-rid-c-3312-2011